The Study of Effect of the Active Layer Thickness on the Electrical properties of Organic Thin Film Transistor.

  • Nadhim Abduljaleel,Abdullah*1,Waleed Ali Hussain2 and Hussain falih Hussain2. 1-Department of Materials Sciences/Po1-Department of Materials Sciences/Polymer Research Centre/ University of Basra / Iraq. 2- Department of Physics/ College of Education for Pure Sciences/ Basra University.lymer Research Centre/ University of Basra / Iraq. 2- Department of Physics/ College of Education for Pure Sciences/ Basra University.
Keywords: Organic field effect transistor OFET, TG-BC, Poly(3-hexylthiophene-2,5-diyl) (P3HT), Polyvinyl alcohol (PVA), Thin film, Mobility, Threshold voltage, Channel resistant.

Abstract

In the present work, organic field effect transistor in TG-BC configuration was fabricated of Poly(3-hexylthiophene-2,5-diyl) (P3HT) as an active layer, and polyvinyl alcohol (PVA) as a gate dielectric layer. OFET was made at AL/PVA/P3HT/Au structure in constant conductance channel width (W=1mm) and length (L=60µm). The dielectric layer was deposited in constant revolution speed (1000rpm) by spin coating method, While the semiconducting polymer was deposited in multi revolution speeds (1000, 1500, 2000, 2500, 3000) rpm to obtain a different active layer thickness. All devices were worked in enhancement or accumulation mode. The best characteristic of the organic field effect transistor is when the thickness of an active layer corresponding to (2500rpm), which has the highest saturation mobility value (5.86x10-3 cm2/Vs) and (Ion/Ioff= 786), and lowest threshold voltage (-22V) and channel resistance (9.57x105 Ω).

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Published
2021-06-30
Issue
Vol 20 No 40 (2021): Maisan Journal of Academic Studies
Section
Articles

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