The Study of Effect of the Active Layer Thickness on the Electrical properties of Organic Thin Film Transistor.

  • Nadhim Abduljaleel,Abdullah*1,Waleed Ali Hussain2 and Hussain falih Hussain2. 1-Department of Materials Sciences/Po1-Department of Materials Sciences/Polymer Research Centre/ University of Basra / Iraq. 2- Department of Physics/ College of Education for Pure Sciences/ Basra University.lymer Research Centre/ University of Basra / Iraq. 2- Department of Physics/ College of Education for Pure Sciences/ Basra University.
Keywords: Organic field effect transistor OFET, TG-BC, Poly(3-hexylthiophene-2,5-diyl) (P3HT), Polyvinyl alcohol (PVA), Thin film, Mobility, Threshold voltage, Channel resistant.

Abstract

In the present work, organic field effect transistor in TG-BC configuration was fabricated of Poly(3-hexylthiophene-2,5-diyl) (P3HT) as an active layer, and polyvinyl alcohol (PVA) as a gate dielectric layer. OFET was made at AL/PVA/P3HT/Au structure in constant conductance channel width (W=1mm) and length (L=60µm). The dielectric layer was deposited in constant revolution speed (1000rpm) by spin coating method, While the semiconducting polymer was deposited in multi revolution speeds (1000, 1500, 2000, 2500, 3000) rpm to obtain a different active layer thickness. All devices were worked in enhancement or accumulation mode. The best characteristic of the organic field effect transistor is when the thickness of an active layer corresponding to (2500rpm), which has the highest saturation mobility value (5.86x10-3 cm2/Vs) and (Ion/Ioff= 786), and lowest threshold voltage (-22V) and channel resistance (9.57x105 Ω).

Downloads

Download data is not yet available.
Published
2021-06-30
How to Cite
Nadhim Abduljaleel,Abdullah*1,Waleed Ali Hussain2 and Hussain falih Hussain2. (2021). The Study of Effect of the Active Layer Thickness on the Electrical properties of Organic Thin Film Transistor. (Humanities, Social and Applied Sciences) Misan Journal of Academic Studies , 20(40), E-16. Retrieved from https://misan-jas.com/index.php/ojs/article/view/196
Issue
Vol 20 No 40 (2021): Maisan Journal of Academic Studies
Section
Articles

The copyright is also the copyright of the magazine only.

All articles published in our magazine are subject to license terms

Creative Commons Attribution(CC BY-NC-ND 4.0) This license permits the content to be reproduced, redistributed and reused in whole or in part for any purpose free of charge, without any permission from the author(s), researcher or student.

Works submitted to Maysan Journal of Academic Studies for publication in the journal (CC BY-NC-ND 4.0) license terms. Where available content can be shared, distributed and replicated provided there is no commercial profit and appropriate credit must be given to the original source through sources or citations. It is mandatory to review any material used from other sources including shapes, tables, and images for re-use under the terms of the Creative Commons License (CC BY-NC-ND 4.0).Provided that there is no modification to the original content